IRF8301MTRPBF mosfet equivalent, power mosfet.
5V
2.5V 10
1 0.1
≤60µs PULSE WIDTH Tj = 150°C 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Output Characteristics
2.0 ID = 32A
1.5
VGS = 10V VGS = 4.5V.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The Dir.
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